jiangsu changjiang electronics technology co., ltd to-92l plastic-encapsulate transistors 2SC2703 transistor (npn) features high dc current gain: h fe =100-320 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current -continuous 1 a p c collector power dissipation 0.75 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v collector cut-off current i cbo v cb =30v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =2v,i c =100ma 100 320 dc current gain h fe(2) v ce =2v,i c =800ma 40 collector-emitter saturation voltage v ce(sat) i c =800ma,i b =80ma 0.5 v base-emitter voltage v be v ce =2v,i c =800ma 1.5 v transition frequency f t v ce =2v,i c =100ma 150 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 13 pf classification of h fe(1) rank o y range 100-200 160-320 to-92l 1. emitter 2. collector 3. base j c ( t www.cj-elec.com 1 a,jun,2014 www.cj-elec.com d,mar,2016 b,jan,2012
symbol dimensions in millimeters dimensions in inches min. max. min. max. a 3.750 4.050 0.148 0.159 a1 1.280 1.580 0.050 0.062 b 0.380 0.550 0.015 0.022 b1 0.620 0.780 0.024 0.031 c 0.350 0.450 0.014 0.018 d 4.750 5.050 0.187 0.199 d1 4.000 0.157 e 7.850 8.150 0.309 0.321 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 13.800 14.200 0.543 0.559 - 1.600 0.063 0.000 0.300 0.000 0.012 h www.cj-elec.com 2 d,mar,2016
www.cj-elec.com 3 d,mar,2016
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